microwave power gan hemt microwave semiconductor TGI8596-50 technical data ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may results from its use, no license is granted by implic ation or otherwise under any patent or patent rights of toshiba or others. the information contained herein is subject to change without prior notice. it is therefor advisable to contact toshiba before proceeding with design of equipment incorporating this product. rev. july, 2009 features ? high power ? broad band internally matched hemt pout=47.0dbm at pin=41.0dbm hermetically sealed package ? high gain gl=9.0db at 8.5ghz to 9.6ghz rf performance specif ications ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. output power pout dbm 46.0 47.0 drain current i ds1 a 5.0 6.0 power added efficiency add vds= 24v idsset ? 1.5a f = 8.5 to 9.6ghz @pin = 41dbm % 31 linear gain gl @pin = 20dbm db 7.0 9.0 channel temperature rise tch (vds x ids1 + pin ? pout)x rth(c-c) c 130 150 recommended gate resistance(rg) : rg= 13.3 ? (typ.) electrical characteristics ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. transconductance gm v ds = 5 v i ds = 5.0a s ? 4.5 ? pinch-off voltage v gsoff v ds = 5 v i ds = 23ma v -1 -4 -6 saturated drain current i dss v ds = 5v v gs = 0v a ? 15 ? gate-source breakdown voltage v gso i gs = -10ma v -10 ? ? thermal resistance r th(c-c) channel to case c/w ? ? 1.6
TGI8596-50 2 absolute maximum ratings ( ta= 25 c ) characteristics symbol unit rating drain-source voltage v ds v 50 gate-source voltage v gs v -10 drain current i ds a 15 total power dissipation (tc= 25 c) p t w 140 channel temperature t ch c 250 storage t stg c -65 to +175 package outline ( 7- aa04a ) unit in mm c gate d source e drain handling precautions for package model soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 c.
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